| Vgs (th) (Max) @ Id: | 2.45V @ 250µA |
|---|---|
| teknologia: | MOSFET (Metal Oxide) |
| Toimittaja Device Package: | DIRECTFET™ MX |
| Sarja: | HEXFET® |
| RDS (Max) @ Id, Vgs: | 2.7 mOhm @ 27A, 10V |
| Tehonkulutus (Max): | 2.8W (Ta), 89W (Tc) |
| Pakkaus: | Tape & Reel (TR) |
| Pakkaus / Case: | DirectFET™ Isometric MX |
| Käyttölämpötila: | -40°C ~ 150°C (TJ) |
| Asennustyyppi: | Surface Mount |
| Tulo Kapasitanssi (Ciss) (Max) @ Vds: | 4130pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs: | 42nC @ 4.5V |
| FET tyyppi: | N-Channel |
| FET Ominaisuus: | - |
| Valua lähde jännite (Vdss): | 20V |
| Virta - Jatkuva tyhjennys (Id) @ 25 ° C: | 27A (Ta), 150A (Tc) |
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