| Hinta | |
|---|---|
| 1 | $3.65 |
| 100 | $3.51 |
| 500 | $3.425 |
| Vgs (th) (Max) @ Id: | 3.5V @ 1.2mA |
|---|---|
| Vgs (Max): | +18V, -8V |
| teknologia: | SiCFET (Silicon Carbide) |
| Toimittaja Device Package: | D2PAK-7 |
| Sarja: | C3M™ |
| RDS (Max) @ Id, Vgs: | 360 mOhm @ 7.5A, 15V |
| Tehonkulutus (Max): | 50W (Tc) |
| Pakkaus: | Tube |
| Pakkaus / Case: | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
| Käyttölämpötila: | -55°C ~ 150°C (TJ) |
| Asennustyyppi: | Surface Mount |
| Tulo Kapasitanssi (Ciss) (Max) @ Vds: | 150pF @ 600V |
| Gate Charge (Qg) (Max) @ Vgs: | 9.5nC @ 15V |
| FET tyyppi: | N-Channel |
| FET Ominaisuus: | - |
| Taajuusmuuttajan jännite (Max Rds On, Min Rds On): | 15V |
| Valua lähde jännite (Vdss): | 900V |
| Virta - Jatkuva tyhjennys (Id) @ 25 ° C: | 11A (Tc) |
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